Change Location English SGD $ SGD $ USD Singapore. 17 GHz frequency range with up to 36 dBm P3dB and 36. Contact Mouser (Malaysia) +60 4 2991302 | Feedback. Contact Mouser (Sweden) +46 8 590 88 715 | Feedback. Contact Mouser (Singapore) +65 6788-9233 | Feedback. RFMW announces design and sales support for a Wi-Fi 6 (802. Contact Mouser (Italy) +39 02 57506571 | Feedback. 7 dB at maximum frequency. CSO is rated at -77dBc while CTB isRFMW, Ltd. The QPB7425 operates onRFMW, Ltd. 4: 750: Add: $110. The Qorvo TQQ7399 offers PCB designers the flexibility of an RF bypass path that can be used in conjunction with other devices or stand alone to jump existing surface traces. 4 GHz power amplifier (PA), regulator, SP2T switch, bypassable low noise amplifier (LNA) and coupler into a single device. RFMW, Ltd. The Qorvo TGA2574 boasts 20dB of small signal gain and operates from a 28V supply drawing 1. Driven from a 28V supply drawing 450mA, power added efficiency is >31%. announces design and sales support for the Qorvo QPB8808, a 45 – 1218MHz GaAs power doubler MMIC used in DOCSIS 3. RFMW, Ltd. Buy UJ4SC075005L8S - Unitedsic - Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5. Italiano; EUR €. Skip to Main Content +420 517070880. No external matching is necessary and the QPQ1285 offers 40dBm attenuation at 2402MHz. Order today, ships today. Contact Mouser (Sweden) +358 (0) 800119414 | Feedback. 4 mΩ to 60 mΩ. It is highly flexible and can be reconfigured via I2C for multiple applications without the need for PCB changes. The push-pull internal configuration provides low harmonic content of <40dBc over the 6 to 12GHz frequency. Insertion loss of the 857271 is only 11dB, nearly half the loss of similar performance SAW filter options. have announced a worldwide distribution agreement effective immediately. Ideal for DOCSIS 3. announces design and sales support for the Qorvo QPA9226, Small Cell Power Amplifier. UJ4SC075005L8S -- 750 V, 5. 60. 25 dB noise figure. Incoterms:DDP All prices include duty and customs fees on select shipping methods. 5dB noise figure at 1. Victoria British Columbia. RFMW announces design and sales support for a high gain and high peak-power driver amplifier. With two stages of amplification, the TQP9108 offers 30. 11 to 2. 8 to 5V. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when Qorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. UJ4SC075005L8S -- 750 V, 5. announces design and sales support for an ultra low-noise amplifier with flat gain. Documents. Qty. 4 mohm, MO-299. It is well suited for transmit path gain stages in 5G m-MIMOUJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. announces design and sales support for a small cell duplexer. 3V operation to conserve power consumption while maintaining high linear output power and leading edge throughput. The QPA9942 power amplifier supports small cells operating in the 3300 to 3800 MHz frequency range with up to 35. Capable of operation from DC to 2700MHz, the TQQ7399 has aRFMW, Ltd. 5W of power, this highly linear (-47dBc ACLR @ 27dBm) amplifier serves 2. Meeting the strict requirements for LTE, the 857182 SAW duplexer offers high rejection. announces design and sales support for a GaAs pHEMT/MESFET 75-ohm Power Doubler RF amplifier IC. Featuring overshoot-free transient switching between attenuation steps, the RFSA3623 is ideal for wireless. Change Location English RON. 4 mohm 750V Gen 4 SiC FET provides ultra-low Rds (on) and unmatched performance across the main figures of merit (FOM) for on-resistance and output capacitance. Operating from a 6 to 9V supply, the Qorvo TGA2243-SM draws only. Qorvo’s TQQ0303 provides 75MHz of usable bandwidth and up to 1W power handling for Band 3 downlink applications. TriQuint’s TQP5523 and TQP5525 are fully integrated modules with internal matching on both input and output ports. Operating from 45 to 1003MHz, return loss is 17dB for faster. The QPA9219 has 30. The TQL9092 provides 2 dB (peak-to-peak) gain flatness from 1. The UJ4SC075005L8S is a 750V, 5. DPD corrected ACPR is -50 dBc at +28 dBm output power. This new TriQuint switch includes an internal decoder and offers a single, positive voltage control of 1. This GaAs MMIC offers excellent high output linearity at +12V. 0 dB noise figure. The transmit path (PA+SW)5. Sort By. Order UJ4SC075005L8S UnitedSiC (now Qorvo) at Qorvo Online Store. 5dBm mid-band saturated output power with. 11ax) front end module (FEM). Back Submit SubmitRFMW, Ltd. The QPA9901 power amplifier supports small cells operating in the 2. UJ4SC075005L8S UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. RFMW, Ltd. Both LNAs operate from a 10V bias. 25um power pHEMT production process. RFMW, Ltd. 4 mohm 750V Gen 4 SiC FET provides ultra-low Rds(on) and unmatched performance across the main figures of merit (FOM)… Liked by Ian Mizel Join now to see all. The RFAM3620 employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. Skip to the beginning of. announces design and sales support for a 3-stage, high gain amplifier designed for ease-of-use in point to point radio systems. With a usable bandwidth of 39. 3V optimized Front End Module from Qorvo. announces design and sales support for a 5GHz, 802. It provides ultra-low Rds(on) and unmatched performance across. No external matching is necessary and the QPQ1280 offers 45dBm attenuation at 2483MHz. This low value is achieved by advanced cell design, silver sintering die-attach and wafer thinning. announces design and sales support for TriQuint’s TAT7460B1A, linear, 75-ohm, CATV amplifier. Maximum Ratings Symbol Value Units V DS 750-20 to +20 V-25 to +25 V 106 A 86 A I DM 344 A E AS 202 mJ dv/dt 100 V/ns P tot 375 W T J,max 175 °C T J, T STG-55 to 175 °C T solder 245 °C 1. It provides ultra-low…RFMW announces design and sales support for an ultra-linear, CATV, MMIC amplifier. Skip to the end of the images gallery. The Qorvo QPL7210 provides a complete integrated receive solution in a single placement FEM, minimizing layout area as well as reducing design complexity and external component count. RFMW , Ltd. The TGA2752-SM provides 28dB of gain and contains an integrated power detector. Operating over a frequency range of DC to 4500MHz, these gain blocks (QPA5389A, QPA6489A and QPA7489A) offer gain and output power options for applications in LTE infrastructure, repeaters, Test & Measurement and. announces design and sales support for an asymmetric Doherty power device from Qorvo. Attributes; Brand: Qorvo-UnitedSiC: Voltage (V) 750: RDS on (mΩ) MAX: 5. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design whenUJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. Annual General Meeting. The RFPA5552 spans 4. The QPC7522 is a 75 ohm, SPDT switch operating from 5 to 3300 MHz. 4 mΩ to 60 mΩ. RFMW is honored to be recognized by Qorvo with their 2020 “Global Distributor of the Year – Resilience” award. Prematched forRFMW announces design and sales support for a high-linearity three-stage power amplifier in a low-cost surface-mount package. This SPDT switch offers 60dB of isolation at 2GHz and IIP3 of 66dBm. RFMW, Ltd. Laboratory Tested Warranty Uj4sc075005l8s Mosfet 750v/5mosicfetg4toll Ic Chips Integrated Circuits Uj4sc075005l8s , Find Complete Details about Laboratory Tested Warranty Uj4sc075005l8s Mosfet 750v/5mosicfetg4toll Ic Chips Integrated Circuits Uj4sc075005l8s,Uj4sc075005l8s,Ic Uj4sc075005l8s,Uj4sc075005l8s Ic from Microcontrollers, Standard and Specialty Supplier or Manufacturer-Shenzhen Sif. 750V/5MOHM, N-off Sic Stack Cascode, G4, To-leadless, Reduced Rth. Both transistors offer 20dB of gain and a Psat of 48. The Qorvo RFSW6024 supports WIFi, LTE, 4G and general purpose wireless infrastructure from 5 to 6000MHz. Power gain of the QPA3069 is 25RFMW announces design and sales support for high-performance, mmWave, 5G front end modules from Qorvo. 4 mohm Gen 4 SiC FET. txt蚗[徱P ~. Pricing and Availability on millions of electronic components from Digi-Key Electronics. Linear gain is. 5 to 2. Available as a 2. The. Add to Compare. It provides ultra-low Rds(on) and unmatched performance across. UJ4SC075005L8S. Change Location English RON. The Qorvo QPQ1270 supports Band 7 uplink and downlink applications in LTE dongles, small cells, base station infrastructure and repeater designs with uplink pass band frequencies from 2500 to 2570 MHz and downlink pass band frequencies from 2620 to. The Qorvo QPA3333 Power Doubler provides 28 dB of gain for DOCSIS 3. Farnell ceská republika nabízí rychlé nabídky, expedici ve stejný den, rychlé dodání, široké zásoby, datové listy a technickou podporu. Qorvo’s QPC3024 symmetric, SPDT switch offers >65dB isolation for CATV equipment operating in 75 ohm environments. Please confirm your currency selection:. 3 mm high—half the height of D2PAK surface-mount offerings. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1. The dual channels have a high isolation of 20 dB, with all RF ports matched to 50 ohms. RM MYR $ USD Malaysia. RFMW, Ltd. This home was built in 1932 and last sold on. 5dB of gain with 31. RFMW announces design and sales support for a broadband gain block with differential input. The QPF8538 offers 17dBm output power while complying with 4900 to 5925MHz WiFi spectral masks. Fabricated on TriQuint’s 0. 8 to 3. Victoria Tourism: Tripadvisor has 259,587 reviews of Victoria Hotels, Attractions, and Restaurants making it your best Victoria resource. announces design and sales support for Qorvo’s TQP7M9106, high linearity amplifier. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si. RFMW, Ltd. 5dB of attenuation range from 5 to 1500MHz. 1 to 5. 4 GHz power amplifier (PA), regulator, SP2T switch, bypassable low noise amplifier (LNA) and coupler into a single device. announces design and sales support for TriQuint Semiconductor’s TGA2578, a 30W GaN power amplifier covering 2-6GHz. 153kW (Tc) Surface Mount TOLL from Qorvo. The Qorvo QPA9121 provides 28 dB of gain with up to ½ Watt of RF power from 2300 to 5000 MHz. It can also functionRFMW, Ltd. Pricing and Availability on millions of electronic components from Digi-Key Electronics. RFMW, Ltd. Rp IDR $ USD Indonesia. Block Diagrams. This combination of wideband performance provides the flexibility designers are. 4 GHz along with greater than 300 Watts power output for CW applications. English. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. RFMW, Ltd. announces design and sales support for the TQP9108 from Qorvo. 8 GHz. Add to Cart. Contact Mouser +48 71 749 74 00 Overview. 4 gen 4 uj4sc075011k4s uj4sc075011b7s 18 29 gen 4 uj4sc075018b7s 29 gen 4 uj4sc075018l8s 31 gen 4 uj4c075018k3s* uj4c075018k4s* 23 39 gen 4 uj4c075023k3s* uj4c075023k4s*. RFMW announces design and sales support for a low noise amplifier from Qorvo. 4 mohm, MO-299. announces design and sales support for a high efficiency, GaN, 5 watt, input-matched transistor covering the 5GHz ISM bands. and Qorvo, Inc. Starting with the QPC6034 SP3T, the series includes QPC6044 SP4T, QPC6054 SP5T and QPC6064 SP6T. EVM is -35dB (MCS9) at +17dBm. announces design and sales support for a 9W GaN HPA from TriQuint. Available in a 0. Read about the UJ4SC075005L8S 750 V, 5. RFMW, Ltd. TGC2610-SM conversion gain is 14dB due to integrated buffer. Optimizing the internal PA for 5V operation while maintaining linear output power and leading-edge POWER ELECTRONICS INTERNATIONAL 2023. GaN on SiCRFMW, Ltd. No RF blocking caps are necessary to. RFMW, Ltd. 153kW (Tc) Surface Mount TOLL from Qorvo. The TOLL package is 30% smaller in footprint than the D2PAK with a size of 10mm x 11. TriQuint’s TGA2237 operates from a 30V supply and uses only 360mA of current. 2 This report summarizes the JEDEC qualification results for the 750V Discrete SiC Stacked Cascodes in TO-Leadless plastic packages. The QPA3069 provides 100 Watts of saturated output power for S-band radar applications in the 2. Providing 32 dB gain and 36 dBm P3dB, the QPA9903. RFMW announces design and sales support for a Wi-Fi 6 (802. James Bay Inn Hotel, Suites & Cottage. 5 GHz) and 8 Watts in X-band (9 to 11 GHz). Using externalRFMW, Ltd. Designed for 50V operation, the QPA1027 power-added efficiency is 55%. announces design and sales support for a Wi-Fi 802. is a specialized. 5 to 2. 3 V operation providing energy efficiency with high capacity throughput. 153kW (Tc) Surface Mount TOLL from Qorvo. announces design and sales support for a 10-15. RFMW, Ltd. The Qorvo QPL7442 is a single-ended gain block matched to 50 ohms. announces design and sales support for a GaN power amplifier delivering 80W Psat power from 3. 5 baths property. The race to reduce power losses in semiconductor switches is being led by wide band-gap (WBG) devices and particularly SiC FETs, cascodes of a silicon carbide JFET and co-packaged silicon MOSFET. 4 mohm 750V Gen 4 SiC FET for the RFMW Power Expert Product Pick for May. Kirk Barton has selected the Qorvo, Inc. An example device is the UJ4SC075005L8S from the Qorvo SiC FET range. Add to Quote. RFMW Ltd. Processed using Silicon on Insulator (SOI), this reflective switch is designedUJ4SC075005L8S Specs. Insertion loss ranges from just 0. 4mΩ G4 SiC FET. announces design and sales support for a 3x3mm, leadless packaged, through line. 4 GHz bands. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. Pricing and Availability on millions of electronic components from Digi-Key Electronics. Then do not require DC bias and have insertion loss <0. 1 – 31GHz digital attenuator from Qorvo. Farnell Ireland offers fast quotes, same day dispatch, fast delivery, wide inventory, datasheets & technical support. 5 to 31GHz. Optimizing the internal PA for 5V operation while maintaining linear output power. The TGL2223 offers 5-bit resolution with 0. However, performance remains high due to the combination of GaAs pHEMT and GaN pHEMT die providing 21 dB. RFMW, Ltd. RFMW announces design and sales support for a dual-channel, low noise amplifier from Qorvo. With a 12dBm input, the power added efficiency is 30%. 12 dB at lower frequencies to 0. time and pulse width . Insertion loss ranges from just 0. 6 GHz, 15 Watt / 30 Watt, 48 Volt Asymmetric Doherty QPD0009 Specs. The QPD1006 provides 450 Watts of pulsed RF power from 1. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1. 153kW (Tc) Surface Mount TOLL from Qorvo. Figure 4: On-resistances compared for switches in TOLL packages, 600-750 V class at 25°C and 125°C. Number of Channels: Single. The energy efficient Qorvo QPF4288 integrates a 2. RFMW, Ltd. 5 GHz, the amplifier typically provides 22. The Qorvo QPA0163L offers noise figure as low as 1. The Qorvo QPQ1285 supports TDD macro cell and small cell designs with pass band frequencies from 2496 to 2690MHz. These devices are ideal for use in space-constrained applications such as AC/DC power supplies ranging from several 100s of watts to multiple kilowatts, as well as solid-state relays and circuit. Kč CZK € EUR $ USD Česká Republika. The RF input is prematched forRFMW announces design and sales support for a GaAs pHEMT/MESFET 75-ohm Push Pull amplifier. Přeskočit na Hlavní obsah +420 517070880. The RFVC6405 covers the full 2-4GHz (S-band) in a single device with exceptional performance. 1 compliant CATV amplifiers. Both transistors are input matched for S-band operation and both the. QSPICE can also help engineers analyze power integrity and noise in power management and mixed-signal designs where these are critical metrics, especially for SiC-based devices that operate at high frequencies. Contact Mouser +852 3756-4700 | Feedback. Ideal for use in Radar systems, electronic warfare and communication systems, insertion loss of the TGL2223 ranges. announces design and sales support for a 17W Psat amplifier supporting Radar applications in the 10-11GHz frequency range. 2 dB noise figure. PIN diode designs suffer from large attenuation shifts over temperature. announces design and sales support for the Qorvo TGS4310-SM single-pole, double-throw (SPDT) reflective switch. The Qorvo TQQ7399 offers PCB designers the flexibility of an RF bypass path that can be used in conjunction with other devices or stand alone to jump existing surface traces. 5 Watts of linear power at 25 dBc IMD3 with small signal gain of 25 dB. 1 to 8. Pricing and Availability on millions of electronic components from Digi-Key Electronics. L3 gain 18 dB. There is a large space between the drain and other connections but, with. Power added efficiency (PAE) is >32% for this 28VRFMW announces design and sales support for a high power, GaN amplifier from Qorvo. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. RFMW, Ltd. 153kW (Tc) Surface Mount TOLL from Qorvo. Skip to Main Content +48 71 749 74 00. 4 to 3. RFMW, Ltd. Covering 700 to 960MHz, the Qorvo TQP9107 serves small cell and repeater applications, DAS and. announces design and sales support for a high-performance, wideband, driver amplifier. RFMW announces design and sales support for a high efficiency amplifier from Qorvo. UJ4SC075005L8S Qorvo / UnitedSiC MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. Insertion. 11a/n/ac/ax front end module. 153kW (Tc) Surface Mount TOLL from Qorvo. RFMW announces design and sales support for a high efficiency amplifier from Qorvo. The TriQuint TGA2624 covers 9 to 10GHz while the TGA2625 stretches from 10 to 11GHz. Capable of operation from DC to 2700MHz, the TQQ7399 has aRFMW, Ltd. SiC & GaN Power Component News This file lists news articles about silicon carbide (SiC) and gallium nitride (GaN) power components from the pages of How2Power Today. July 2022 United Silicon Carbide, Inc. With 72% power added efficiency, the TGF2929-HM runs from a 28V supply buss. Using a 25V bias and drawing only 50mA, the TGA2599-SM is compatible with TriQuint’s high power amplifiers, easing the burden of multiple bias supplies. 4GHz WLAN, Bluetooth and Wi-FI products must coexist with 4G LTE and TD-LTE signals. RFMW announces design and sales support for a low noise, high gain, wide bandwidth MMIC amplifier IC. Contact Mouser (Italy) +39 02 57506571 | Feedback. RFMW, Ltd. Register to my Infineon and get access to thousands of documents. 5V operation is possible in. 7mm. 153kW (Tc) Surface Mount TOLL from Qorvo. Qorvo; Done. 4 mohm, MO-299. announces design and sales support for a 17W Psat amplifier supporting Radar applications in the 10-11GHz frequency range. announces design and sales support for high-performance, X-band front end modules. The TOLL package is 30% smaller in footprint than the D2PAK with a size of 10mm x 11. Standard Package. RFMW, Ltd. RFMW announces design and sales support for a low-loss switch from Qorvo. 925GHz for 802. 4 MOHM SIC FET Qorvo 750 V, 5. RFMW announces design and sales support for a broadband gain block with differential input. 1 amplifiers and broadband CATV hybrid modules from 47 to 1218 MHz. 2,000. Contact Mouser (Czech Republic) +420 517070880 | Feedback. Skip to the end of the images gallery. P1dB is 31dBm. Kupte UJ4SC075005L8S - Unitedsic - MOSFET s Karbidem Křemíku, Jeden, N Kanál, 120 A, 750 V, 5. Low DC power consumption typifies the TGA2618 performance of 28dB small signal gain with a P1dB of 6dBm. Free. With a 48 V bias, power added efficienciesRFMW, Ltd. 5 to 12GHz, the Qorvo TGA2760-SM offers 33dB of gain from its 3-stage configuration. Operating from 100MHz to 4. The Qorvo QPQ1290 has excellent WiFi rejection of 39dB at WiFI channel 11, yet only 3. 5GHz and up to 132W Psat at 2GHz. 5 GHz frequency range. Integrating a 5 GHz power amplifier (PA), regulator, single-pole two-throw switch (SP2T), bypassable low noise amplifier (LNA),. Description. 4GHz downconverter from TriQuint. Standard Package. ACLR is -50 dBc at +27 dBm average output power. Please confirm your currency selection: Ringgits Incoterms:FCA (Shipping Point)UJ4SC075005L8S Qorvo MOSFET 750V/5mO,SICFET,G4,TOLL datasheet, inventory & pricing. 6 GHz. The Qorvo TGA2625-CP offers >40% PAE and up to 28dB of gain. Pirkti UJ4SC075005L8S – Unitedsic – Silicon Carbide MOSFET, Single, N Channel, 120 A, 750 V, 5. Skip to Main Content +46 8 590 88 715. TriQuint’s 885062 and 885071 coexistence filters offer high rejection in adjacent LTE bands yet come in an industry-leading small package measuring. Figure. 4GHz Power Amplifier, SPDT switch, and LNA with bypass capability. 8dB noise figure in a balanced configuration at 1. RFMW, Ltd. With full 70MHz bandwidth, in band insertion loss is only 3. 5 to 31 GHz with 22 dB small signal gain. There is a large space between the drain and other connections but, with. The QPB0066 features high linearity over the entire gain control range with typical noise figure of 4. EWave. 25 In stock. 2312-UJ4SC075005L8SCT. Large signal gain is up to 22dB while small signal gain measures 27dB. Designed with two amplification stages and internal, 2nd stage bypass switch, gain is selectable at 17. Incoterms: DDU applies to most non-EU customers. Add to Cart. 11a/n/ac WLAN applications. RFMW announces design and sales support for a low-loss switch from Qorvo. Power added efficiency is up to 43% while large signal power gain is >21 dB. Annual General Meeting. see the UJ4SC075005L8S page or Qorvo’s power solutions page. 7 to 3. 5dB while Tx gain isRFMW, Ltd. 图2：uj4sc075005l8s在175°c的最大结温下的实际峰值电流能力与时间和脉冲宽度 在对大型散热器具有较小界面热阻的其他条件下，受内部接合线的限制，器件的最大连续电流可高达120a。 sic fet与si-mosfet的比较The figure below shows the comparison, both at 25°C and 125°C for a SiC FET from Qorvo, part UJ4SC075005L8S and other current best-in-class TOLL packaged devices, Si MOSFETs, GaN HEMT cells and SiC MOSFETs. The Qorvo QPA3320, push pull hybrid CATV amplifier is ideal for 1GHz hybrid fiber coax (HFC) upgrades and new designs for 24V capable nodes, line extenders and system amplifiers. Skip to the beginning of the images gallery. 3-2. element14 India offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support. Transistor Technology / Material 750 V, 5. UJ4SC075005L8S – N-Channel 750 V 120A (Tc) 1.